New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

THz resonant-tunneling diodes

Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

Al(Ga)N/GaN resonant tunneling diodes (RTDs) are grown by metal-organic chemical vapor deposition. The effects of material quality on room temperature negative differential resistance (NDR) behaviour of RTDs are investigated by growing the RTD structure on AlN, GaN, and lateral epitaxial overgrowth GaN templates. This reveals that NDR characteristics of RTDs are very sensitive to material quali...

Electron-photon interaction in resonant tunneling diodes

– We develop a model to describe the transmission coefficient and tunneling current in the presence of electron-photon coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between electronic states with different wave numbers. This is crucial to explain the experimental features observed in the tunneling current through a double barrier whi...

Ferromagnetic Resonant Tunneling Diodes: Physics and Applications

Dedication To my family. v Acknowledgements I would like to acknowledge, foremost, my advisor Prof. Sanjay Banerjee. I should thank him for providing me the opportunity to pursue graduate study, his constant support for the last six years – both intellectual and material, and the flexibility he afforded to me to define and follow my interests. Second, I would like to acknowledge my co-advisor P...

Resonant-tunneling diodes with emitter prewells

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...